A Compact Ka-band SPDT Switch with High Isolation

被引：0

作者：

Liu, Chao ^{[1
,2
]}

Li, Qiang ^{[1
]}

Xiong, Yong-Zhong ^{[2
]}

机构：

[1] Univ Elect Sci & Technol, Chengdu, Peoples R China

[2] CAEP, Terahertz Res Ctr, Chengdu 611731, Peoples R China

来源：

2014 14TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC) | 2014年

关键词：

Ka-band; SPDT; high isolation; CMOS; T/R switch; DESIGN; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Ka-band high isolation single-pole-double-throw (SPDT) switch using 0.13 mu m CMOS process. The switch has a measured insertion loss of 2.7-3.7 dB and an input 1-dB compression power (P-1dB) of 8 dBm at 35 GHz. Via using the shunt NMOS topology and high quality factor match networks, 33-50 dB measured isolation is obtained within the frequency range of 30-45GHz. The switch core occupies 160 x 180 mu m(2) chip area.

引用

页码：304 / 307

页数：4

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