Plan-view image contrast of dislocations in GaN

被引：61

作者：

Follstaedt, DM ^{[1
]}

Missert, NA ^{[1
]}

Koleske, DD ^{[1
]}

Mitchell, CC ^{[1
]}

Cross, KC ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1632540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that when vertical threading dislocations in (0001) GaN are imaged in plan-view by transmission electron microscopy, a surface-relaxation contrast operates in addition to that due to the strain fields of dislocations passing through the specimen. We show that all three dislocation types (edge, screw, and mixed) can be detected in the same image using g=(11 (2) over bar0) and 18degrees specimen tilt from [0001], allowing total densities to be assessed properly. The type of an individual dislocation can also be readily identified. (C) 2003 American Institute of Physics.

引用

页码：4797 / 4799

页数：3

共 19 条

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