ELECTRIC FILED EFFECT ON THE INTERBAND TRANSITIONS IN NEAR-SURFACE QUANTUM WELLS

被引：0
|
作者：
Niculescu, Ecaterina C. [1 ]
Burcea, Florin [1 ]
机构：
[1] Univ Politehn Bucuresti, Dept Phys, Bucharest, Romania
来源：
UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN-SERIES A-APPLIED MATHEMATICS AND PHYSICS | 2011年 / 73卷 / 01期
关键词：
Quantum well; electronic states; electric field; image-charge; NONLINEAR-OPTICAL RECTIFICATION; FIELD; SUSCEPTIBILITY; EXCITONS;
D O I：
暂无
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
The electric field dependence of the interband transitions in a near-surface quantum well (NSQW) under an applied electric field is investigated in the effective mass approximation and taking into account the electrostatic self-energy due to the repulsive interaction of the carriers with their image charges. For small capped layer thicknesses we observe strongly changes in the single particle spectrum and an asymmetric Stark shift of the inlet-band transition energy. Such a dependence of the optoelectronic properties on the geometry and electric field strength in NSQWs can be yen, useful for several potential device applications.
引用
收藏
页码：201 / 208
页数：8
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