Preparation of an Epitaxy-Ready Surface of a ZnO(0001) Substrate

被引：20

作者：

Akasaka, Shunsuke ^{[3
]}

Nakahara, Ken ^{[3
]}

Yuji, Hiroyuki ^{[3
]}

Tsukazaki, Atsushi ^{[1
,2
,4
]}

Ohtomo, Akira ^{[5
]}

Kawasaki, Masashi ^{[1
,2
,6
,7
,8
]}

机构：

[1] Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[3] ROHM Co Ltd, Interdisciplinary Devices R&D Ctr, Kyoto 6158585, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

[5] Tokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, Japan

[6] Tohoku Univ, WPI Adv Inst Mat Res AIMR, Sendai, Miyagi 9808577, Japan

[7] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[8] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 03期

基金：

日本学术振兴会;

关键词：

ROOM-TEMPERATURE; ZNO; DEPOSITION; REMOVAL;

D O I：

10.1143/APEX.4.035701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that there can be a contamination of silica particles on the surface of chemo-mechanically polished ZnO substrates. Consideration of the base of electrochemistry led us to a hypothesis that the alkaline polishing solution produces a layer of Zn(OH)(2) capturing silica particles. In-situ observation of the etching process in an acidic solution by means of an atomic force microscope as well as zeta potential measurements supports this hypothesis and gives a clear guidance to solve the problem. We find that an epitaxy-ready surface can be reproducibly prepared by dipping ZnO substrates in an HCl solution (HCl : H(2)O = 7 : 200) for 30 s. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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