A Novel Non-isolated GaN-based DC-DC Converter with High Step-Down Gain

被引：1

作者：

Yu, Longyang ^{[1
]}

Yang, Chengzi ^{[1
]}

Feng, Shuting ^{[1
]}

Yan, Feifei ^{[1
]}

Zhou, Xiang ^{[1
]}

Wang, Laili ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian, Peoples R China

来源：

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA) | 2020年

关键词：

gallium nitride; high step-down gain; low voltage stress; BUCK CONVERTER;

D O I：

10.1109/WiPDAAsia49671.2020.9360280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the emerging technology of wide-band-gap power semiconductors and modern ferrite materials, the switching frequency of dc-dc converters based on gallium nitride (GaN) devices can be further pushed to megahertz range and achieve higher power density. A high step-down gain, high efficiency non-isolated dc-dc converter is proposed for front-end dc-dc converters used in data centers. The proposed converter is composed of three active switches, two synchronous rectifiers, two clamping capacitors and two inductors. Compared with the conventional buck converters, the proposed converter has higher voltage gain and lower voltage stresses across the active switches. A 300 W/1 MHz GaN-based experimental prototype is built and tested to verify the correctness and validity, demonstrating a peak efficiency of 93.3% and full-load efficiency of 90.7%.

引用

页数：5

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