Resonant-tunneling electron emitter in an AIN/GaN system

An AlN/GaN multiple-barrier resonant-tunneling electron emitter is proposed in this letter, utilizing polarization fields in the AlN/GaN heterostructure. The resonant-tunneling voltage is extremely high, compared with usual resonant-tunneling devices, due to the polarization field in the heterostructure, and this high resonant voltage enables practical use of the devices. Selective and high-density electron emission is to be expected through the resonant-tunneling layer and GaN surface accelerating layer. (c) 2005 American Institute of Physics.