Hybrid Synthesis and Processing Schemes for Highly-Ordered Polyaniline Nanoarchitectures

被引：0

作者：

Vlad, A. ^{[1
]}

Jedrasik, P. ^{[2
]}

Dutu, C. A. ^{[1
]}

Serban, D. A. ^{[1
]}

Guillet, P. ^{[3
]}

Fustin, C. -A. ^{[3
]}

Sodervall, U. ^{[2
]}

Gohy, J. F. ^{[3
]}

Melinte, S. ^{[1
]}

机构：

[1] Catholic Univ Louvain, Lab Dispositifs Integres & Circuits Elect, B-1348 Louvain, Belgium

[2] Chalmers, Dept Microtechnol & Nanosci MC2, SE-412 96 Gothenburg, Sweden

[3] Catholic Univ Louvain, Unite Chim Mat Inorganiques & Organiques, B-1348 Louvain, Belgium

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

NANOFIBRES; GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a newly developed technology for the nanoscale processing of the conducting polyaniline (PAN!) with an unprecedented areal patterning order and density control exceeding 0.25 teradot/inch(2). A simple two-step process is put forward to hierarchically build a large variety of functional PANI nanostructures on virtually any type of flexible or rigid substrates. Using template confinement, through Pt catalyzed electroless growth, highly-ordered arrays of distinct PANI nanowires are produced. Complex three-dimensional (3D) structural control is achieved through a direct pattern transfer using a novel type of resist- and dose-modulated 3D electron beam lithography. The method is scalable and provides a generic approach for nanopatterning surfaces with functional polymers. Aspects of the nanoscale PANI growth mechanism are discussed and the highly controllable, sub-picogram scale fabrication is emphasized. Simple schemes for single PANI nanowire fabrication, processing and device integration are presented.

引用

页码：429 / +

页数：2

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