Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn:NiO/ITO

被引：23

作者：

Ge, Ni-Na ^{[1
]}

Gong, Chuan-Hui ^{[1
]}

Yuan, Xin-Cai ^{[1
]}

Zeng, Hui-Zhong ^{[2
]}

Wei, Xian-Hua ^{[1
]}

机构：

[1] Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

RSC ADVANCES | 2018年 / 8卷 / 52期

基金：

中国国家自然科学基金;

关键词：

DOPED BIFEO3 FILMS; MEMORY;

D O I：

10.1039/c8ra04784g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol-gel spin-coating. As the Mn doping concentration increased, lattice constant, grain size and band gap were found to decrease simultaneously. Moreover, the electroforming voltages and threshold voltages were gradually reduced. It can be ascribed to the increase in the density of grain boundaries, and the defects caused by doping Mn and lower formation energy of Mn-O. They would be helpful for the formation of oxygen vacancies and conductive filaments. It is worth mentioning that excellent BRS behaviors can be obtained at a low Mn-doped concentration including enlarged ON/OFF ratio, good uniformity and stability. Compared with other samples, the 1% Mn-doped NiO showed the highest ON/OFF ratio (>10(6)), stable endurance of >100 cycles and a retention time of >10(4) s. The mechanism should be determined by bulk properties rather than the dual-oxygen reservoir structure. These results indicate that appropriate Mn doping can be applied to improve the BRS characteristics of NiO thin films, and provide stable, low-power-consumption memory devices.

引用

页码：29499 / 29504

页数：6

共 28 条

[1] Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers [J].