Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy

被引：11

作者：

Akasaka, Tetsuya ^{[1
]}

Kobayashi, Yasuyuki ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 07期

基金：

日本学术振兴会;

关键词：

SUPERSATURATION; KINETICS;

D O I：

10.1143/APEX.3.075602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used selective-area metalorganic vapor phase epitaxy to study Frank-van der Merwe growth mechanisms of GaN. Step-free GaN surfaces with the diameter of 15-50 mu m were fabricated within selective areas free of screw-type dislocations. The growth rate was independent of the area, indicating multi-nucleation growth. The nucleation rate was in a range of 10(5)-10(7) cm(-2) s(-1) and the average two-dimensional nucleus density was 5 x 10(6) cm(-2). Selective areas having screw-type dislocations resulted in double growth spirals consisting of monolayer steps. The degree of supersaturation near the growing surface calculated from the interstep distance was independent of the area. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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