Morphology and strongly enhanced photoresponse of GaP electrodes made porous by anodic etching

被引:142
作者
Erne, BH
Vanmaekelbergh, D
Kelly, JJ
机构
[1] Debye Institute, University of Utrecht
关键词
D O I
10.1149/1.1836428
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Single crystalline n-type GaP was made porous by anodic etching in the dark in sulfuric acid solution. The morphology and (photo)electrochemical properties of the porous layer were investigated. Submicron pits 10 to 30 mu m apart were formed at the surface. Below the surface, the pits acted as the nuclei of distinct porous domains. Pore widths and pore wall thicknesses were approximately 100 nm. The creation of the porous layer caused the quantum yield for light-to-current conversion to increase from extremely low values to unity for light absorbed in the indirect optical transition. The mechanism of pore formation and the striking opto-electrical properties of porous GaP are discussed.
引用
收藏
页码:305 / 314
页数:10
相关论文
共 43 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]  
BARD AJ, 1980, ELECTROCHEMICAL METH
[3]   DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE [J].
BARKER, AS .
PHYSICAL REVIEW, 1968, 165 (03) :917-&
[4]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[5]  
BELOGOROKHOV AI, 1994, JETP LETT+, V60, P274
[6]   CHARACTERIZATION OF VAPOR GROWN (001) GAAS1-XPX LAYERS BY SELECTIVE PHOTO-ETCHING [J].
BLOK, L .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :250-255
[7]   VISIBLE-LIGHT EMISSION FROM A POROUS SILICON SOLUTION DIODE [J].
BRESSERS, PMMC ;
KNAPEN, JWJ ;
MEULENKAMP, EA ;
KELLY, JJ .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :108-110
[8]   JET POLISHING OF SEMICONDUCTORS .2. ELECTROCHEMICALY FORMED TUNNELS IN GAP [J].
CHASE, BD ;
HOLT, DB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :314-&
[9]   VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].
CULLIS, AG ;
CANHAM, LT .
NATURE, 1991, 353 (6342) :335-338
[10]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&