Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts

被引：17

作者：

Cheng, X ^{[1
]}

Sin, JKO

Kang, BW

Feng, CG

Wu, Y

Liu, XM

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[3] Beijing Power Elect R&D Ctr, Beijing, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 05期

基金：

中国国家自然科学基金;

关键词：

body diode; recovery speed; Schottky contact; VDMOSFET;

D O I：

10.1109/TED.2003.813226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500 V/2 A VDMOSFETs.

引用

页码：1422 / 1425

页数：4

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