Hydrogen molecules in silicon located at interstitial sites and trapped in voids

被引:98
作者
Hourahine, B [1 ]
Jones, R
Oberg, S
Newman, RC
Briddon, PR
Roduner, E
机构
[1] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England
[2] Univ Lulea, Dept Math, S-97187 Lulea, Sweden
[3] Univ London Imperial Coll Sci Technol & Med, Semicond IRC, London SW7 2BZ, England
[4] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[5] Inst Phys Chem, D-70569 Stuttgart, Germany
关键词
D O I
10.1103/PhysRevB.57.R12666
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vibrational modes of H-2 molecules in Si are found using a first-principles method and compared with recent experimental investigations. The isolated molecule is found to lie at a T-d interstitial site, oriented along [011] and is infrared active. The rotational barrier is at least 0.17 eV. The molecular frequency is a sensitive function of cage size and increases to lie close to the gas value for cages about 50% larger than the T-d site. It is suggested that Raman-active modes around 4158 cm(-1) are due to molecules within voids.
引用
收藏
页码:12666 / 12669
页数:4
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