Joint Rewriting and Error Correction in Write-Once Memories

被引：0

作者：

Jiang, Anxiao ^{[1
]}

Li, Yue ^{[1
]}

Gad, Eyal En ^{[2
]}

Langberg, Michael ^{[2
,3
]}

Bruck, Jehoshua ^{[2
]}

机构：

[1] Texas A&M Univ, Dept Comp Sci & Engn, College Stn, TX 77843 USA

[2] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

[3] Open Univ Israel, Dept Math & Comp Sci, IL-43107 Raanana, Israel

来源：

2013 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY PROCEEDINGS (ISIT) | 2013年

关键词：

CODES; CAPACITY;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Both rewriting and error correction are important technologies for non-volatile memories, especially flash memories. However, coding schemes that combine them have been limited. This paper presents a new coding scheme that combines rewriting and error correction for the write-once memory model. Its construction is based on polar codes, and it supports any number of rewrites and corrects a substantial number of errors. The code is analyzed for the binary symmetric channel, and experimental results verify its performance. The results can be extended to multi-level cells and more general noise models.

引用

页码：1067 / +

页数：2

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