Joint Rewriting and Error Correction in Write-Once Memories

被引:0
|
作者
Jiang, Anxiao [1 ]
Li, Yue [1 ]
Gad, Eyal En [2 ]
Langberg, Michael [2 ,3 ]
Bruck, Jehoshua [2 ]
机构
[1] Texas A&M Univ, Dept Comp Sci & Engn, College Stn, TX 77843 USA
[2] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
[3] Open Univ Israel, Dept Math & Comp Sci, IL-43107 Raanana, Israel
关键词
CODES; CAPACITY;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Both rewriting and error correction are important technologies for non-volatile memories, especially flash memories. However, coding schemes that combine them have been limited. This paper presents a new coding scheme that combines rewriting and error correction for the write-once memory model. Its construction is based on polar codes, and it supports any number of rewrites and corrects a substantial number of errors. The code is analyzed for the binary symmetric channel, and experimental results verify its performance. The results can be extended to multi-level cells and more general noise models.
引用
收藏
页码:1067 / +
页数:2
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