Construction, characterization, and reliability of BaTiO3-based buried thick film capacitor materials sets, 1200<K<1600

被引：5

作者：

Bolton, PJ ^{[1
]}

Velasquez, R ^{[1
]}

Mason, RC ^{[1
]}

机构：

[1] DuPont Photopolymer & Elect Mat, Res Triangle Pk, NC 27709 USA

来源：

1998 INTERNATIONAL CONFERENCE ON MULTICHIP MODULES AND HIGH DENSITY PACKAGING, PROCEEDINGS | 1998年

关键词：

thick film; buried capacitor; cofired; multilayer interconnect; integrated passive components;

D O I：

10.1109/ICMCM.1998.670828

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

DuPont investigated an X7R BaTiO3 based buried thick film capacitor materials, K epsilon (1200, 1600). Capacitor construction methodology is established using various combinations of conductor, high dielectric constant (K) characterized by capacitance, dissipation factor, insulation resistance, and temperature change in capacitance. Reliability was ascertained by break down voltage, capacitive decay, thermal cycling, voltage bias, HHBT(humidity, voltage bias, and temperature), and capacitance refire stability. In general, for the material sets studied both low insulation resistance(< 10(9) Omega) and high dissipation factor(df > 5%) are positively correlated with low break down voltage(< 600 V) and can be used as predictors of reliability failure. A new parameter; the reliability quotient, correlates break down voltage with capacitance, dissipation factor and insulation resistance. The optimum materials sets and assembly procedure for reliability and capacitive performance are described.

引用

页码：484 / 489

页数：6

Construction, characterization, and reliability of BaTiO3-based buried thick film capacitor materials sets, 1200&lt;K&lt;1600

Construction, characterization, and reliability of BaTiO3-based buried thick film capacitor materials sets, 1200<K<1600