Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires

被引:156
作者
Dubrovskii, V. G. [1 ,2 ]
Sibirev, N. V. [1 ]
机构
[1] Russian Acad Sci Res & Educ, St Petersburg Phys Technol Ctr, St Petersburg 195220, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1103/PhysRevB.77.035414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theoretical model for the growth thermodynamics of nanowires in different epitaxial techniques is presented, which enables one to determine morphological and structural configurations of the nanowire ensemble with minimum formation energy. It is demonstrated that nanowire ensembles are metastable and controlled entirely by the growth kinetics. The model is applied to studying the polytypism of zinc blende III-V nanowires. It is shown that structural transition should occur within a certain domain of radii and vapor supersaturations. Different polytypes between wurtzite and zinc blende structures with periodicity up to 18 layers are analyzed. It is demonstrated that 4H polytype has the lowest formation energy and the largest critical radius of transition amongst all polytypes. Numerical estimates predict the critical radius of structural phase transition of 17 - 25 nm for GaAs nanowires growing on the GaAs(111)B substrate.
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共 32 条
[1]   An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].
Akiyama, T ;
Sano, K ;
Nakamura, K ;
Ito, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278
[2]   Structural stability and electronic structures of InP nanowires: Role of surface dangling bonds on nanowire facets [J].
Akiyama, Toru ;
Nakamura, Kohji ;
Ito, Tomonori .
PHYSICAL REVIEW B, 2006, 73 (23)
[3]  
[Anonymous], 1988, PHYS SURFACES
[4]   Vertical high-mobility wrap-gated InAs nanowire transistor [J].
Bryllert, T ;
Wernersson, LE ;
Fröberg, LE ;
Samuelson, L .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :323-325
[5]   (111) SURFACE TENSIONS OF III-V COMPOUNDS AND THEIR RELATIONSHIP TO SPONTANEOUS BENDING OF THIN CRYSTALS [J].
CAHN, JW ;
HANNEMAN, RE .
SURFACE SCIENCE, 1964, 1 (04) :387-398
[6]   Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].
Chuang, Linus C. ;
Moewe, Michael ;
Chase, Chris ;
Kobayashi, Nobuhiko P. ;
Chang-Hasnain, Connie ;
Crankshaw, Shanna .
APPLIED PHYSICS LETTERS, 2007, 90 (04)
[7]   Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].
Dick, KA ;
Deppert, K ;
Mårtensson, T ;
Mandl, B ;
Samuelson, L ;
Seifert, W .
NANO LETTERS, 2005, 5 (04) :761-764
[8]   Diffusion-controlled growth of semiconductor nanowires: Vapor pressure versus high vacuum deposition [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Suris, R. A. ;
Cirlin, G. E. ;
Harmand, J. C. ;
Ustinov, V. M. .
SURFACE SCIENCE, 2007, 601 (18) :4395-4401
[9]   Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment [J].
Dubrovskii, VG ;
Cirlin, GE ;
Soshnikov, IP ;
Tonkikh, AA ;
Sibirev, NV ;
Samsonenko, YB ;
Ustinov, VM .
PHYSICAL REVIEW B, 2005, 71 (20)
[10]   Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy [J].
Dubrovskii, VG ;
Sibirev, NV ;
Cirlin, GE ;
Harmand, JC ;
Ustinov, VM .
PHYSICAL REVIEW E, 2006, 73 (02)