Electrical properties of GaN (Fe) buffers for AlGaN/GaN high electron mobility transistor structures

被引：17
作者：
Polyakov, A. Y. [1 ]
Smirnov, N. B. [1 ]
Govorkov, A. V. [1 ]
Yugova, T. G. [1 ]
Markov, A. V. [1 ]
Dabiran, A. M. [2 ]
Wowchak, A. M. [2 ]
Cui, B. [2 ]
Xie, J. [2 ]
Osinsky, A. V. [2 ]
Chow, P. P. [2 ]
Pearton, S. J. [3 ]
机构：
[1] Inst Rare Metals, Moscow 119017, Russia
[2] SVT Assoc Inc, Eden Prairie, MN 55344 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期
基金：
美国国家科学基金会; 俄罗斯基础研究基金会;
关键词：
D O I：
10.1063/1.2838734
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of AlGaN/GaN high electron mobility transistor structures grown on composite GaN(Fe)/GaN buffers by molecular beam epitaxy were reported. The concentration of Fe in the GaN(Fe) layer ranged from 8x10(16) to 3x10(17) cm(-3) as established by secondary ion mass spectrometry. The thickness of the undoped GaN layer of the buffer was varied from 2.2 to 4.1 mu m. For thinner buffers and higher Fe concentration, the buffer was semi-insulating, with the Fermi level pinned near E-c-0.57 eV. For thicker buffers and lower Fe concentration, the top part of the buffer was conducting. Admittance spectra measured in conducting buffers also showed a prominent contribution from E-c-(055-0.6) eV electron traps. Despite the universal prominence of these traps in all our films, the behavior of their concentration with Fe doping and with increased distance from the GaN (Fe)/GaN boundary is not compatible with the assumption that they are due to substitutional Fe acceptors. Possible compensation mechanisms in the studied structures were discussed. (c) 2008 American Institute of Physics.
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页数：3
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