Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure

被引：42

作者：

Munde, M. S. ^{[1
,2
,3
]}

Mehonic, A. ^{[1
]}

Ng, W. H. ^{[1
]}

Buckwell, M. ^{[1
]}

Montesi, L. ^{[1
]}

Bosman, M. ^{[2
]}

Shluger, A. L. ^{[3
]}

Kenyon, A. J. ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, Torrington Pl, London WC1E 7JE, England

[2] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis,08-03, Singapore 138634, Singapore

[3] UCL, Dept Phys & Astron, Gower St, London WC1E 6BT, England

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

英国工程与自然科学研究理事会;

关键词：

OXIDE; BIPOLAR; SITES;

D O I：

10.1038/s41598-017-09565-8

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiOx) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

引用

页数：7

共 46 条

[1] Metal oxide resistive memory switching mechanism based on conductive filament properties [J].

Bersuker, G. ;

Gilmer, D. C. ;

Veksler, D. ;

Kirsch, P. ;

Vandelli, L. ;

Padovani, A. ;

Larcher, L. ;

McKenna, K. ;

Shluger, A. ;

Iglesias, V. ;

Porti, M. ;

Nafria, M. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)

[2] 'Memristive' switches enable 'stateful' logic operations via material implication [J].

Borghetti, Julien ;

Snider, Gregory S. ;

Kuekes, Philip J. ;

Yang, J. Joshua ;

Stewart, Duncan R. ;

Williams, R. Stanley .

NATURE, 2010, 464 (7290) :873-876

[3] Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM [J].

Buckwell, Mark ;

Montesi, Luca ;

Hudziak, Stephen ;

Mehonic, Adnan ;

Kenyon, Anthony J. .

NANOSCALE, 2015, 7 (43) :18030-18035

[4] Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory [J].

Chang, Yao-Feng ;

Chen, Pai-Yu ;

Fowler, Burt ;

Chen, Yen-Ting ;

Xue, Fei ;

Wang, Yanzhen ;

Zhou, Fei ;

Lee, Jack C. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (12)

[5] Microstructure dependent filament forming kinetics in HfO2 programmable metallization cells [J].

Clarke, Heidi ;

Brown, Timothy ;

Hu, Jianjun ;

Ganguli, Raj ;

Reed, Amber ;

Voevodin, Andrey ;

Shamberger, Patrick J. .

NANOTECHNOLOGY, 2016, 27 (42)

[6] STRUCTURE OF SILICON OXIDE FILMS [J].

COLEMAN, MV ;

THOMAS, DJD .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :593-&

[7] Nature of intrinsic and extrinsic electron trapping in SiO2 [J].

El-Sayed, Al-Moatasem ;

Watkins, Matthew B. ;

Afanas'ev, Valery V. ;

Shluger, Alexander L. .

PHYSICAL REVIEW B, 2014, 89 (12)

[8] Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations [J].

El-Sayed, Al-Moatasem ;

Watkins, Matthew B. ;

Shluger, Alexander L. ;

Afanas'ev, Valeri V. .

MICROELECTRONIC ENGINEERING, 2013, 109 :68-71

[9] A STRUCTURAL INVESTIGATION OF SOME EVAPORATED SiOx FILMS [J].

Forty, A. J. ;

Kerkar, M. ;

Robinson, J. ;

El-Mashri, S. M. ;

Farrabaugh, E. N. .

JOURNAL DE PHYSIQUE, 1986, 47 (C-8) :325-328

[10] A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection [J].

Gao, David Z. ;

El-Sayed, Al-Moatasem ;

Shluger, Alexander L. .

NANOTECHNOLOGY, 2016, 27 (50)

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