A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs

被引：16

作者：

Chen, Chao-Jung ^{[1
]}

Wang, Ruey-Lue ^{[2
]}

Su, Yan-Kuin ^{[1
]}

Hsueh, Ting-Jen ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 701, Taiwan

[2] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

Attenuation; coplanar waveguide; crosstalk suppression; high-resistivity silicon; nanocrystalline silicon; RESISTIVITY;

D O I：

10.1109/LED.2010.2095817

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a thin nanocrystalline silicon (nc-Si) layer grown by hot-wire chemical vapor deposition is used as a surface-passivation layer (SPL). The transmission loss alpha(TL) of coplanar waveguide lines on an oxide-coated high-resistivity silicon substrate with a 100-nm-thick nc-Si SPL is less than 1.05 dB/cm at frequencies up to 20 GHz. Furthermore, we found that the very thin nc-Si SPL is also greatly effective for reducing crosstalk noise and further enhancing the isolation characteristics of electrical circuits. Therefore, an nc-Si SPL is capable of providing good surface passivation for RF IC applications.

引用

页码：369 / 371

页数：3

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