Doping Effects of Vanadium Pentoxide in Hole Injection Layer for Quantum Dot Light Emitting Diodes

被引：8

作者：

Song, Suk-Ho ^{[1
]}

Song, Dae-Ho ^{[2
]}

Lee, Jun-Seo ^{[1
]}

Kim, Sang-Soo ^{[2
]}

Song, Jang-Kun ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon, Gyeonggi Do, South Korea

[2] Sungkyunkwan Univ, Sch Semicond & Display Engn, Suwon, Gyeonggi Do, South Korea

来源：

2ND INTERNATIONAL CONFERENCE ON COMPOSITE MATERIALS AND MATERIAL ENGINEERING (ICCMME2017) | 2017年 / 1846卷

基金：

新加坡国家研究基金会;

关键词：

PEDOT:PSS; TMO; V2O5; Hole injection layer; QD-LED;

D O I：

10.1063/1.4983599

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the doping effect of V2O5 into hole injection layer (HIL) for quantum dot light emitting diodes (QDLEDs). We used PEDOT: PSS for HIL, and by doping 0.1 wt% of V2O5 into PEDOT: PSS layer, the maximum external quantum efficiency was increased from 1 % to 1.28 % and the turn-on voltage was reduced from 14.65 V to 12.72 V, when compared to pure PEDOT: PSS. This indicates that V2O5 enhances the hole injection property for PEDOT: PSS layer.

引用

页数：4

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