Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

被引：33

作者：

Kim, Chang Oh ^{[1
]}

Kim, Sung ^{[1
]}

Oh, Hyoung Taek ^{[1
]}

Choi, Suk-Ho ^{[1
]}

Shon, Yoon ^{[2
]}

Lee, Sejoon ^{[2
]}

Hwang, Han Na ^{[3
]}

Hwang, Chan-Cuk ^{[3
]}

机构：

[1] Kyung Hee Univ, Inst Nat Sci, Dept Appl Phys, Coll Appl Sci, Yongin 446701, South Korea

[2] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[3] Pohang Univ Sci & Technol, Beamline Res Div, Pohang Accelerator Lab, Pohang 790784, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 22期

关键词：

ZnO; Cu; Ferromagnetism; Doping type; Hole carriers;

D O I：

10.1016/j.physb.2010.08.061

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (n(cu)), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with n(cu) >= 1 mol% were obviously ferromagnetic, whilst the n-type samples with n(cu) <= 0.75 mol% exhibited paramagnetism. By increasing ncu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4678 / 4681

页数：4

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