Structural and morphological characterisation of heteroepitaxial CeO2 films grown on YSZ (100) and TiO2 (001) by metal-organic chemical vapour deposition

被引：5

作者：

Lo Nigro, R

Malandrino, G

Fragalà, IL

机构：

[1] Univ Catania, Dipartimento Sci Chim, INSTM, I-95125 Catania, Italy

[2] CNR, IMM, Sez Catania, I-95125 Catania, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 102卷 / 1-3期

关键词：

buffer layers; metal-organic chemical vapour deposition; epitaxy; cerium dioxide; rutile;

D O I：

10.1016/S0921-5107(02)00646-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the deposition of <100> CeO2 buffer layers by metal-organic chemical vapour deposition (MOCVD) on TiO2(001) and YSZ(100) substrates from Ce(111) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato diglyme adduct (Ce(hfa)(3).diglyme). X-ray diffraction techniques (theta-2theta, omega-scans, pole figures) have been used to determine out-of-plane and in-plane alignments of CeO2 films. Films on both YSZ(100) and TiO2 (001) are <100> oriented beyond 450 degreesC deposition temperatures. Rocking curve full width half maximum (FWHM) values and pole figure patterns point to good out-of-plane and in-plane alignments. Epitaxial growth on rutile substrate is obtained below 750 degreesC. Morphological characterisation indicates smooth and homogeneous surfaces. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：323 / 326

页数：4

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