Design and optimization of very high power density monochromatic GaAs photovoltaic cells

被引：24

作者：

Algora, C ^{[1
]}

Diaz, V ^{[1
]}

机构：

[1] UPM, ETSI Telecomunicac, Inst Energia Solar, Madrid 28040, Spain

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 09期

关键词：

photovoltaic cells; photovoltaic power systems; power transmission; laser applications;

D O I：

10.1109/16.711373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper deals with the structure optimization of very high power density monochromatic GaAs photovoltaic cells and the theoretical prediction of their performance at irradiances ranging from 0.1 to 100 W/cm(2). A multifaceted optimum design including the front metal grid, device size and the semiconductor layer structure is presented. The variation in efficiency depending an emitter thickness, base thickness, emitter doping and base doping is also addressed. The objective of this being the configuration of a structure suitable for working up to 100 W/cm(2) without the detrimental influence of series resistance. For this, a detailed analysis of the effect of series resistance and the quantitative determination of its different components is carried out. The optimum wavelength is 830 nm at 300 K for ail the analyzed light intensities, in which a 63% peak efficiency under an irradiance of 100 W/cm(2) for a p/n structure is obtained. The temperature effect on device performance in the 273-350 K range is also studied. Finally, the influence of device processing is analyzed.

引用

页码：2047 / 2054

页数：8

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