ZnO homojunction white light-emitting diodes

被引：51

作者：

Baltakesmez, Ali ^{[1
]}

Tekmen, Suleyman ^{[1
]}

Tuzemen, Sebahattin ^{[1
]}

机构：

[1] Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 05期

关键词：

THIN-FILMS; ELECTRICAL-PROPERTIES; DOPED ZNO; HETEROJUNCTION; FABRICATION; GROWTH; SUBSTRATE; REALIZATION; NANORODS; LAYER;

D O I：

10.1063/1.3627247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-Type-doped ZnO films were grown on nominally undoped n-ZnO, which is deposited on p-Si:B by electrochemical deposition. The electrical properties of individually doped ZnO:Na/Mg/Sb/Ti films were determined by means of the Hall system at the room temperature. Our results showed that doped ZnO films had high mobility ranging from 11 to 638 cm(2)/V s, carrier concentration ranging from 6.00 x 10(16) to 3.37 x 10(19) cm(-3), and low resistivity ranging from 1.62 x 10(-2) to 21.9 x 10(-2) Omega cm. Electroluminescence measurements of obtained homojunctions exhibited three main broad luminescence bands peaking at 2.8, 2.5, and 1.98 eV, respectively. In addition to these broadbands, Fabry-Perot oscillations were also observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627247]

引用

页数：7

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