Fabrication of Transparent and Flexible Organic Field-Effect Transistors with Solution-Processed Graphene Source-Drain and Gate Electrodes

被引：25

作者：

Suganuma, Koichi ^{[1
]}

Watanabe, Shunichiro ^{[1
]}

Gotou, Takuya ^{[2
]}

Ueno, Keiji ^{[1
]}

机构：

[1] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Sakura, Saitama 3388570, Japan

[2] Mitsubishi Gas Chem Co Inc, Tokyo Res Lab, Tokyo 1258601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

THIN-FILM TRANSISTORS; BOTTOM-CONTACT; PATTERNED GRAPHENE; OXIDE; DISPLAYS; CARBON;

D O I：

10.1143/APEX.4.021603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent organic field-effect transistors with solution-processed graphene source-drain and gate electrodes were fabricated on flexible substrates. Graphene electrodes were formulated by chemical and thermal reduction of solution-processed graphene oxide films. A graphene gate electrode, a gate dielectric layer, and an organic active layer were coated on a transparent flexible polyimide film. Next, graphene source-drain electrodes, which had been formed on another glass substrate, were peeled off and transferred onto the active layer using a thermal release tape. The transparent and flexible poly(3-hexylthiophene) transistor with graphene electrodes showed p-type characteristics with hole mobility of 2.3 x 10(-2) cm(2).V(-1).s(-1). (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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