Electron injection in semiconductor drift detectors

被引：7

作者：

Bellwied, R

Beuttenmuller, R

Chen, W

DiMassimo, D

Dou, L

Dyke, H

French, A

Hall, JR

Hoffmann, GW

Humanic, T

Kotov, IV

Kraner, HW

Li, Z

Lynn, D

Ott, G

Pandey, SU

Pruneau, C

Rykov, VL

Schambach, J

Sedlmeir, J

Sugarbaker, E

Takahashi, J

Wilson, WK

机构：

[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48202 USA

[2] Brookhaven Natl Lab, Upton, NY 11973 USA

[3] Ohio State Univ, Columbus, OH 43210 USA

[4] Univ Texas, Austin, TX 78712 USA

[5] IHEP, Protvino, Russia

[6] Univ Sao Paulo, Sao Paulo, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 416卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0168-9002(98)00561-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report on the injection of electrons from surface structures of Silicon Drift Detectors into the bulk of the detector for calibration purposes. Also, with these injector structures, detection of magnetic field components perpendicular to the detector's surface is possible. Implanted line and dot injectors along with MOS injectors are discussed. Studies of lateral uniformity of injection, biasing of injectors to facilitate injection and dot injection are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：70 / 80

页数：11

共 7 条

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