Near-field optical lithography method for fabrication of the nanodimensional objects

被引:20
作者
Dryakhlushin, VF [1 ]
Klimov, AY [1 ]
Rogov, VV [1 ]
Vostokov, NV [1 ]
机构
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
关键词
scanning near-field optical microscopy; nanolithography;
D O I
10.1016/j.apsusc.2005.03.081
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new method of contact scanning near-field optical lithography has been developed to enable fabrication of elements with characteristic dimensions of 30-50 nm. The method involves the deposition of a thin-layer polymer-metal coating, the thermal destructive deformation of a top metal layer with a probe of scanning near-field optical microscope (SNOM), the transfer of the pattern through the polymer by using dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any material, e.g. metal, dielectric, light/heavy doped semiconductors for the formation of nanometre objects. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:200 / 203
页数:4
相关论文
共 9 条
[1]   Ultrahigh-density atomic force microscopy data storage with erase capability [J].
Binnig, G ;
Despont, M ;
Drechsler, U ;
Häberle, W ;
Lutwyche, M ;
Vettiger, P ;
Mamin, HJ ;
Chui, BW ;
Kenny, TW .
APPLIED PHYSICS LETTERS, 1999, 74 (09) :1329-1331
[2]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[3]  
DAVIS CC, 1997, LASER PHYS, P7243
[4]   Probes for a scanning near-field optical microscope on the base of tapered single-mode optical fiber [J].
Dryakhlushin, VF ;
Klimov, AY ;
Rogov, VV .
ADVANCED OPTOELECTRONICS AND LASERS, 2003, 5582 :296-303
[5]   Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon [J].
Fontaine, PA ;
Dubois, E ;
Stievenard, D .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :1776-1781
[6]   Near-field scanning optical nanolithography using amorphous silicon photoresists [J].
Herndon, MK ;
Collins, RT ;
Hollingsworth, RE ;
Larson, PR ;
Johnson, MB .
APPLIED PHYSICS LETTERS, 1999, 74 (01) :141-143
[7]   Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique [J].
Legrand, B ;
Stievenard, D .
APPLIED PHYSICS LETTERS, 1999, 74 (26) :4049-4051
[8]   Highly parallel data storage system based on scanning probe arrays [J].
Lutwyche, MI ;
Despont, M ;
Drechsler, U ;
Dürig, U ;
Häberle, W ;
Rothuizen, H ;
Stutz, R ;
Widmer, R ;
Binnig, GK ;
Vettiger, P .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3299-3301
[9]   Basic mechanisms of an atomic force microscope tip-induced nano-oxidation process of GaAs [J].
Okada, Y ;
Amano, S ;
Kawabe, M ;
Harris, JS .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :7998-8001