β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination

被引：44

作者：

Dhara, Sushovan ^{[1
]}

Kalarickal, Nidhin Kurian ^{[1
]}

Dheenan, Ashok ^{[1
]}

Rajan, Siddharth ^{[1
,2
]}

Joishi, Chandan ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2022年 / 121卷 / 20期

关键词：

BALIGAS FIGURE; MERIT;

D O I：

10.1063/5.0123284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in beta-Ga2O3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl3/Cl-2-based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. This work provides insight into the impact of etching on n-type Ga2O3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs. Published under an exclusive license by AIP Publishing.

引用

页数：4

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