An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum Wells

被引：10

作者：

Bi, Zhen ^{[1
]}

Zhang, Jincheng ^{[2
]}

Zheng, Qiye ^{[3
]}

Lv, Ling ^{[2
]}

Lin, Zhiyu ^{[2
]}

Shan, Hengsheng ^{[2
]}

Li, Peixian ^{[2
]}

Ma, Xiaohua ^{[2
]}

Han, Yiping ^{[4
]}

Hao, Yue ^{[2
]}

机构：

[1] Xidian Univ, Sch Phys & Optoelect Engn, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

[2] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

[3] Univ Illinois, Dept Mat Sci & Engn, 1304 W Green St, Urbana, IL 61801 USA

[4] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2016年 / 28卷 / 20期

关键词：

Conversion efficiency; InGaN; MQWs; solar cells; CHALLENGES; ALLOYS; GAN;

D O I：

10.1109/LPT.2016.2575058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaN/GaN solar cell including a dual multiple quantum wells (MQWs) structure is investigated. It shows an obvious advantage over the conventional InGaN/GaN cell, which only contains a single MQWs structure. Because the short current density (J(sc)) increases, the 1 sun power conversion efficiency significantly improves from 0.62% (single MQWs cell) to 1.02% (dual MQWs cell). From the measurement of EQE and PL spectra, the enhancement of effective photoelectric response within the solar spectrum mainly contributes to the high device performance, due to the introduced upper MQWs of higher In content.

引用

页码：2117 / 2120

页数：4

共 26 条

[1] InGaN Solar Cells: Present State of the Art and Important Challenges [J].

Bhuiyan, Ashraful Ghani ;

Sugita, Kenichi ;

Hashimoto, Akihiro ;

Yamamoto, Akio .

IEEE JOURNAL OF PHOTOVOLTAICS, 2012, 2 (03) :276-293

[2] The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells [J].

Bi, Zhen ;

Zhang, Jincheng ;

Lv, Ling ;

Hao, Yue .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 26 (15) :1492-1494

[3] Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells [J].

Choi, Sang-Bae ;

Shim, Jae-Phil ;

Kim, Dong-Min ;

Jeong, Hoon-Il ;

Jho, Young-Dahl ;

Song, Young-Ho ;

Lee, Dong-Seon .

APPLIED PHYSICS LETTERS, 2013, 103 (03)

[4] Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis [J].

Dahal, R. ;

Pantha, B. N. ;

Li, J. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2014, 104 (14)

[5] Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. .

APPLIED PHYSICS LETTERS, 2010, 97 (03)

[6] Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells [J].

Fabien, Chloe A. M. ;

Doolittle, W. Alan .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 130 :354-363

[7] Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition [J].

Feng, Zhe Chuan ;

Zhu, Li-Hong ;

Kuo, Ting-Wei ;

Wu, C. -Y. ;

Tsai, Hong-Ling ;

Liu, Bao-Lin ;

Yang, Jer-Ren .

THIN SOLID FILMS, 2013, 529 :269-274

[8] Investigation of properties of InGaN-based vertical-type solar cells with emission wavelengths in ultraviolet-blue-green regions [J].

Kim, Seung Hwan ;

Shim, Jae Phil ;

Park, Hyun Ho ;

Song, Young Ho ;

Park, Hyung Jo ;

Jeon, Seong Ran ;

Lee, Dong Sun ;

Yang, Seung Hyeon ;

Yang, Gye Mo .

JOURNAL OF PHOTONICS FOR ENERGY, 2014, 4

[9] GaN decomposition in H2 and N2 at MOVPE temperatures and pressures [J].

Koleske, DD ;

Wickenden, AE ;

Henry, RL ;

Culbertson, JC ;

Twigg, ME .

JOURNAL OF CRYSTAL GROWTH, 2001, 223 (04) :466-483

[10] Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells [J].

Lang, J. R. ;

Young, N. G. ;

Farrell, R. M. ;

Wu, Y. -R. ;

Speck, J. S. .

APPLIED PHYSICS LETTERS, 2012, 101 (18)

← 1 2 3 →