High Performance 4 GHz FBAR Prepared by Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 Sputtered Thin Films

被引：3

作者：

Matsushima, T. ^{[1
]}

Yamauchi, N. ^{[1
]}

Shirai, T. ^{[1
]}

Yoshihara, T. ^{[1
]}

Hayasaki, Y. ^{[1
]}

Ueda, T. ^{[1
]}

Kanno, I.

Wasa, K. ^{[2
,3
]}

Kotera, H. ^{[2
,3
]}

机构：

[1] Panason Elect Works Co Ltd, Adv Technol Dev Lab, 1048 Kadoma, Osaka 5718686, Japan

[2] Kyoto Univ, Dept Micro Engn, Kyoto 6068501, Japan

[3] Yoshida Honmachi, Kyoto 6068501, Japan

来源：

2010 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS) | 2010年

关键词：

RESONATORS; TITANATE;

D O I：

10.1109/FREQ.2010.5556334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 4 GHz film resontors have been fabricated by sputtered Pb(Mn,Nb)O-3-Pb(Zr,Ti)O-3 (PMnN-PZT) thin films. The PMnN-PZT thin films were deposited on (100) MgO substrates. The thin films showed tetragonal crystal structure and highly (001) orientation. The film bulk acoustic resonators (FBAR) composed by PMnN-PZT thin films were fabricated by MEMS technology. RF properties of the resonator were evaluated by VNA (Vector Network Analyzer). The electromechanical coupling constant k(t) and Q-value for PMnN-PZT thin films were 0.7 and 157, at 4.17GHz, respectively. These values obtained by sputtered thin films are highest comparing with those of previously reported PZT-BAW resonators.

引用

页码：248 / 251

页数：4

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