Temperature dependence of a high-Tc single-flux-quantum logic gate up to 50 K

被引：10

作者：

Saitoh, K ^{[1
]}

Utagawa, T ^{[1
]}

Enomoto, Y ^{[1
]}

机构：

[1] Int Supercond Technol Ctr, Supercond Res Lab, Koto Ku, Tokyo 135, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期

关键词：

D O I：

10.1063/1.121080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high-T-c material and Josephson junction (NdBa(2)Cn(3)O(7-delta) and focused ion beam junction) have been investigated. The logic gate consists or an rf-superconducting quantum interference device (rf-SQUID) and a de-SQUID. In the logic gate, elementary SFQ logic operations, Such as generating SFQ (dc/SFQ) and providing simultaneous readout (SFQ/dc), have been confirmed up to 50 K. The temperature dependencies of the output voltage level and the critical current-normal resistance (IcRn) product were compared, and the decreasing tendency of the output voltage level for increasing temperature was found to be more rapid than that of the IcRn, product. (C) 1998 American Institute of Physics.

引用

页码：2754 / 2756

页数：3

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