Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)

被引：3
作者：
Wedler, G
Walt, J
Hesjedal, T
Chilla, E
Koch, R
机构：
[1] Free Univ Berlin, Inst Phys Expt, D-14195 Berlin, Germany
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
SURFACE SCIENCE | 1998年 / 402卷 / 1-3期
关键词：
atomic force microscopy; epitaxy; germanium; intrinsic stress; semiconducting films; silicon;
D O I：
10.1016/S0039-6028(97)01037-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It is well established that the growth of Ge on SL(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thicknesses at which the 3D islands percolate. From the film stress - and supported by AFM investigations - three stages of film growth characterised by different reliefs of the misfit strain can be discriminated: (1) the pseudomorphic layer-by-layer stage, (2) nucleation and growth and (3) coalescence of 3D islands. (C) 1998 Elsevier Science B.V. All rights reserved.
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收藏
页码：290 / 294
页数：5
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