Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well number

被引：20

作者：

Nakamura, F ^{[1
]}

Kobayashi, T ^{[1
]}

Asatsuma, T ^{[1
]}

Funato, K ^{[1
]}

Yanashima, K ^{[1
]}

Hashimoto, S ^{[1
]}

Naganuma, K ^{[1
]}

Tomioka, S ^{[1
]}

Miyajima, T ^{[1
]}

Morita, E ^{[1
]}

Kawai, H ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; Nitride; Laser diode; MOCVD;

D O I：

10.1016/S0022-0248(98)00306-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The well-number dependence of the optical pumping threshold power for stimulated emission of GaInN multiple quantum-well(MQW) laser structures was investigated. The pumping threshold power for a three GaInN MQW sample was found to be as low as 33 kW/cm(2) at room temperature. The room-temperature pulsed operation of a five GaInN MQW laser diode (LD), whose number of wells was determined: based on the optical pumping experiment, was also demonstrated. The lowest threshold current density was 9.5 kA/cm(2). The lasing wavelength was 417.5 nm with a full-width at half-maximum (FWHM) less than the spectrum resolution of 0.2 run. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：841 / 845

页数：5

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