All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning

被引:13
作者
Ahn, J [1 ]
Lu, D [1 ]
Deppe, DG [1 ]
机构
[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA
关键词
D O I
10.1063/1.1849417
中图分类号
O59 [应用物理学];
学科分类号
摘要
An approach is presented to fabricate a current- and mode-confined vertical-cavity surface-emitting laser that is all-epitaxial and lithographically defined. The device uses selective Fermi level pinning to self-align the electrical injection to a mode-confining intracavity phase-shifting mesa. (C) 2005 American Institute of Physics.
引用
收藏
页码:021106 / 1
页数:3
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