All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning
An approach is presented to fabricate a current- and mode-confined vertical-cavity surface-emitting laser that is all-epitaxial and lithographically defined. The device uses selective Fermi level pinning to self-align the electrical injection to a mode-confining intracavity phase-shifting mesa. (C) 2005 American Institute of Physics.