Thermoelectric Properties of p-Type Mg2.00Si0.25Sn0.75 with Li and Ag Double Doping

被引：39

作者：

Isoda, Y. ^{[1
]}

Tada, S. ^{[2
]}

Nagai, T. ^{[2
]}

Fujiu, H. ^{[2
]}

Shinohara, Y. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Mitsuba Corp, Hirosawa Chou, Gunma 3768555, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 09期

关键词：

Mg2SiSn; silver; lithium; double doping; thermoelectric properties; hot-pressing; liquid-solid reaction method; degenerate semiconductor;

D O I：

10.1007/s11664-010-1280-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mg2Si1-x Sn (x) -system solid solutions are ecofriendly semiconductors that are promising materials for thermoelectric generators in the middle temperature range. To produce a thermoelectric device, high-performance p- and n-type materials must be balanced. In this paper, p-type Mg2.00Si0.25Sn0.75 with Li and Ag double doping was prepared by the liquid-solid reaction method and hot-pressing. Effects of Li and Ag double doping on thermoelectric properties were investigated in the temperature range from room temperature to 850 K. All sintered compacts were identified as single-phase solid solutions with anti-fluorite structure. The carrier concentration increased with the double doping. The temperature dependence of resistivity of the double-doped samples was similar to that of a metal. The seebeck coefficient increased with temperature to a maximum value and then decreased in the intrinsic region. Thermal conductivity decreased linearly with increasing temperature, reaching a minimum near the intrinsic region, and then increased rapidly because of the contribution of the bipolar component. The dimensionless figure of merit reached 0.32 at 610 K for Mg2.00Si0.25Sn0.75 double-doped with Li-5000 ppm and Ag-20000 ppm.

引用

页码：1531 / 1535

页数：5

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