Magnetic anisotropy of ferromagnetic semiconductor [(InGa)Mn]As thin films

被引:1
作者
Yokoyama, M. [1 ]
Ohya, S. [1 ]
Tanaka, M. [1 ]
机构
[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 | 2008年 / 5卷 / 09期
关键词
D O I
10.1002/pssc.200779276
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the magnetic anisotropy of a series of 10-nm-thick [(InyGa1-y)(1-x)Mn-x]As thin films with the Mn content x of 0.12 and with the In content y of 0.38, 0.40, 0.44, 0.48, and 0.54, grown on InP (001) substrates. The tensile-strained [(InyGa1-y)(1-x)Mn-x]As thin films with y = 0.38 - 0.44 have the easy magnetization axis perpendicular to the film plane. With the increase of y, the in-plane component of the magnetic anisotropy becomes more dominant. Using planar Hall effect measurements, we found that the compressively strained [(InyGa1-y)(1-x)Mn-x]As thin films with y = 0.48 and 0.54 have the in-plane uniaxial magnetic anisotropy along the [(1) over bar 10] direction. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码:2901 / 2903
页数:3
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