Physics-based dynamic electro-thermal models of power bipolar devices (PiN diode and IGBT)

被引：13

作者：

Igic, PM ^{[1
]}

Mawby, PA ^{[1
]}

Towers, MS ^{[1
]}

机构：

[1] Univ Coll Swansea, Swansea, W Glam, Wales

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New dynamic electro-thermal models of the power bipolar devices (PiN diode and IGBT) are presented in this paper Firstly, electric device models were made developing a new 1D representation of the ambipolar diffusion equation which is packaged as a module that can be reused for all bipolar devices, subject to appropriate boundary conditions. Then electric models were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and the rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.

引用

页码：381 / 384

页数：4

共 3 条

[1] Choosing a thermal model for electrothermal simulation of power semiconductor devices [J].