Structural and optical properties of porous nanocrystalline Ge

被引:37
|
作者
Kartopu, G. [1 ,2 ]
Sapelkin, A. V. [4 ]
Karavanskii, V. A. [3 ]
Serincan, U. [2 ]
Turan, R. [2 ]
机构
[1] Univ Appl Sci Kiel, Inst Mat & Surface Technol, D-24149 Kiel, Germany
[2] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
[3] Russian Acad Sci, Ctr Nat Sci, Moscow 117942, Russia
[4] Univ London, Dept Phys, London E1 4NS, England
关键词
D O I
10.1063/1.2924417
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substrates with 100 and 111 orientations. The structural and optical properties have been investigated by transmission electron microscopy (TEM), electron diffraction (ED), Raman photoluminescence (PL), and infrared spectroscopy. The average size of nanocrystals (NCs) was estimated by fitting of the Raman spectra using a phonon-confinement model developed for spherical semiconductor NCs. Considered collectively TEM, ED, and Raman results indicate that all films contain high density of 3-4 nm diameter, diamond-structured Ge NCs with disordered surfaces. There are indications that surface of nanoparticles is mainly hydrogen terminated even for air-stabilized samples. Red PL is observed at room temperature upon excitation by 1.96 eV with peak energy of similar to 1.55 eV and correlates well with recent theoretical calculations of the enlarged optical gap in Ge NCs of similar size. (C) 2008 American Institute of Physics.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Thickness dependent structural, electronic, and optical properties of Ge nanostructures
    Tripathi, S.
    Brajpuriya, R.
    Sharma, A.
    Soni, A.
    Okram, G. S.
    Chaudhari, S. M.
    Shripathi, T.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (06) : 2955 - 2963
  • [22] Structural and optical properties of Cu implanted Ge thin films
    Shekhawat, Komal
    Negi, Deepak
    Shyam, Radhe
    Prajapat, Pukhraj
    Gupta, Govind
    Singh, Fouran
    Devi, Devarani
    Ojha, Sunil
    Gupta, Mukul
    Nelamarri, Srinivasa Rao
    PHYSICA B-CONDENSED MATTER, 2024, 674
  • [23] Structural and optical properties of Ge-As-Te thin films
    Mohamed, S. H.
    Wakkad, M. M.
    Ahmed, A. M.
    Diab, A. K.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2006, 34 (03): : 165 - 171
  • [24] Study of structural and optical properties of Ge doped ZnO films
    Jiang, Meifu
    Wang, Zhenning
    Ning, Zhaoyuan
    THIN SOLID FILMS, 2009, 517 (24) : 6717 - 6720
  • [25] Structural and Optical Properties of Polymer Composites/Porous Silicon
    Kulathuraan, K.
    Pandiarajan, J.
    Prithivikumaran, N.
    Jeyakumaran, N.
    Natarajan, B.
    INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY, 2012, 1451 : 215 - 217
  • [26] Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice
    Fonseca, A.
    Sobolev, N. A.
    Leitao, J. P.
    Alves, E.
    Carmo, M. C.
    Zakharov, N. D.
    Werner, P.
    Tonkikh, A. A.
    Cirlin, G. E.
    JOURNAL OF LUMINESCENCE, 2006, 121 (02) : 417 - 420
  • [27] Structural and optical properties of porous silicon at different porosities
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [28] Comparative investigation of optical and structural properties of porous SiC
    Rodriguez, M. M.
    Rivas, J. M.
    Cano, A. D.
    Torchynska, T. V.
    Gomez, J. P.
    Gasga, G. G.
    Sandoval, S. J.
    Mynbaeva, M.
    MICROELECTRONICS JOURNAL, 2008, 39 (3-4) : 494 - 498
  • [29] ELECTRICAL AND OPTICAL-PROPERTIES OF POROUS NANOCRYSTALLINE TIO2 FILMS
    CAO, F
    OSKAM, G
    SEARSON, PC
    STIPKALA, JM
    HEIMER, TA
    FARZAD, F
    MEYER, GJ
    JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (31): : 11974 - 11980
  • [30] Structural and optical properties of nanocrystalline silicon films deposited at 150°C
    Ali, AM
    Sakai, Y
    Adachi, N
    Inokuma, T
    Kurata, Y
    Hasegawa, S
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (1-2): : 219 - 226