Fabrication and plasma resistance properties of transparent YAG ceramics

被引：37

作者：

Qin, Xianpeng ^{[2
,3
]}

Zhou, Guohong ^{[2
]}

Yang, Hao ^{[4
]}

Wong, Jen It ^{[3
]}

Zhang, Jian ^{[1
]}

Luo, Dewei ^{[3
]}

Wang, Shiwei ^{[2
]}

Ma, Jan ^{[1
]}

Tang, Dingyuan ^{[3
]}

机构：

[1] Nanyang Technol Univ, Temasek Labs, Singapore 639798, Singapore

[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[4] Nanjing Univ Technol, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷 / 03期

关键词：

Optical properties; Transparent ceramics; YAG; Microstructure; Plasma resistance;

D O I：

10.1016/j.ceramint.2011.11.023

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High quality transparent yttrium aluminum garnet (YAG) ceramics with an average grain size of about 12 mu m have been fabricated by a solid state reactive sintering method. Plasma resistance property of the fabricated YAG ceramics was studied and compared with that of the Y2O3 ceramics, silicate glass and quartz. The YAG ceramics showed an excellent plasma resistance as well as Y2O3 ceramics. After etching in F-plasma for 6 h, the eroded depth of YAG ceramics was about 100 nm. The plasma resistance of YAG ceramics was far better than that of silicate glass and quartz. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：2529 / 2535

页数：7

共 6 条

[1] Plasma etching: principles, mechanisms, application to micro- and nano-technologies [J].

Cardinaud, C ;

Peignon, MC ;

Tessier, PY .

APPLIED SURFACE SCIENCE, 2000, 164 :72-83

[2] Dense yttrium oxide film prepared by aerosol deposition process at room temperature [J].

Iwasawa, J ;

Nishimizu, R ;

Tokita, M ;

Kiyohara, M ;

Uematsu, K .

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2006, 114 (1327) :272-276

[3] Plasma-resistant dense yttrium oxide film prepared by aerosol deposition process [J].

Iwasawa, Junichi ;

Nishimizu, Ryoichi ;

Tokita, Masahiro ;

Kiyohara, Masakatsu ;

Uematsu, Keizo .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2007, 90 (08) :2327-2332

[4]

Kobayashi Y., 2006, U.S. Patent, Patent No. [7,090,932, 7090932]

[5] High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks [J].

Kolari, K. .

MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) :985-987

[6]

Mitsuhiro Fujita KM., 2005, U.S. Patent, Patent No. [6,838,405, 6838405]

← 1 →