Crossover between weak anti-localization and weak localization by Co doping and annealing in gapless PbPdO2 and spin gapless Co-doped PbPdO2

被引:16
作者
Choo, S. M. [1 ]
Lee, K. J. [1 ]
Park, S. M. [1 ]
Yoon, J. B. [2 ,3 ]
Park, G. S. [1 ]
You, C-Y. [4 ]
Jung, M. H. [1 ]
机构
[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[3] Natl Univ Singapore, NUSNNI, Singapore 117576, Singapore
[4] Inha Univ, Dept Phys, Inchon 402751, South Korea
基金
新加坡国家研究基金会;
关键词
MAGNETORESISTANCE; ANTILOCALIZATION; SPINTRONICS; ELECTRONICS; FUTURE; FILMS;
D O I
10.1063/1.4919452
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetotransport properties of Pb(Pd,Co)O-2 and PbPdO2 thin films were investigated. In magnetoconductance curves, we observed a crossover between weak anti-localization (WAL) and weak localization (WL) depending on the annealing and Co doping in PbPdO2 thin films. For the Pb(Pd,Co)O-2 case showing WAL signals, the ex-situ annealing weakens the Pd-O hybridization by stabilizing Co3+ states and generating Pd1+ states, instead of Pd2+, so that the spin-orbit coupling (SOC) strength is significantly reduced. It causes the dominant magnetotransport mechanism change from WAL to WL. This annealing effect is compared with the PbPdO2 case, which possesses WL signals. The annealing process stabilizes the oxygen states and enhances the Pd-O hybridization, and consequently the SOC strength is enhanced. Our experimental results are well explained by the Hikami-Larkin-Nagaoka theory in terms of two important physical parameters; SOC strength-related alpha and inelastic scattering length l(phi). (C) 2015 AIP Publishing LLC.
引用
收藏
页数:5
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