Band Gap Tuning of Cu2ZnGeSxSe4-x Absorbers for Thin-Film Solar Cells

被引：33

作者：

Schnabel, Thomas ^{[1
]}

Seboui, Mahmoud ^{[1
]}

Ahlswede, Erik ^{[1
]}

机构：

[1] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, Meitnerstr 1, D-70563 Stuttgart, Germany

来源：

ENERGIES | 2017年 / 10卷 / 11期

关键词：

thin-film solar cells; kesterite; CZGS; band gap; OPTICAL-PROPERTIES; CU2ZNSN(S; SE)(4); SURFACE; SE;

D O I：

10.3390/en10111813

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, kesterite-type Cu2ZnGeSxSe4-x absorbers were prepared by a two-step process for use in thin-film solar cells. Their high band gap makes them an interesting candidate as top cells in multijunction solar cells. However, an exact tuning of the band gap is essential. Therefore, for the first time, the[S]/([S] +[Se]) ratio was controlled via addition of a variable amount of GeS during the annealing step, which allowed precise control of the band gap between 1.5 and 1.7 eV. The changes in morphology and crystallinity of the absorber are discussed in detail. An additional focus was directed toward the parameters of the resulting solar cells. Although the efficiency declined as the [S]/([S] +[Se]) ratio increases, the open-circuit voltage was considerably increased.

引用

页数：9

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