Growth and gas sensing characteristics of p- and n-type ZnO nanostructures

被引：87

作者：

Ramgir, N. S. ^{[1
]}

Ghosh, M. ^{[1
]}

Veerender, P. ^{[1
]}

Datta, N. ^{[1
]}

Kaur, M. ^{[1
]}

Aswal, D. K. ^{[1
]}

Gupta, S. K. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Tech Phys Div, Bombay 400085, Maharashtra, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2011年 / 156卷 / 02期

关键词：

ZnO; Nanoparticles; Nanowires; Gas sensor; H(2)S; p-Type semiconductor; CHEMICAL-VAPOR-DEPOSITION; NANOWIRE ARRAYS; ROOM-TEMPERATURE; HYDROTHERMAL METHOD; NANORODS; SENSORS; HYDROGEN; H2S; FABRICATION;

D O I：

10.1016/j.snb.2011.02.058

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

ZnO nanoparticles (NPs) of 5-15 nm size and nanowires (NWs) of 50-100 nm dia., exhibiting p and n-type characteristics, respectively, have been synthesized using simple chemical process. ZnO NW-films exhibited good sensitivity and selectivity towards H(2)S in ppm range with fast response and recovery times. Interestingly, ZnO NP-films showed p-type conductivity that has been obtained for the first time without intentional doping while NW-films showed n-type conduction as has also been reported in various earlier studies. The p- and n-type conductivities in NP- and NW-films have been confirmed using hot probe and Kelvin probe measurements. The n-type behavior of NW-films is attributed to oxygen vacancies, whereas the p-type nature of NP-films is attributed to the zinc vacancy, surface acceptor levels created by the adsorbed oxygen and/or the unintentional carbon doping in ZnO. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：875 / 880

页数：6

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