Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

被引:15
作者
Aono, T. [1 ,3 ]
Suzuki, K. [1 ]
Kanamaru, M. [1 ]
Okada, R. [1 ]
Maeda, D. [1 ]
Hayashi, M. [2 ]
Isono, Y. [3 ]
机构
[1] Hitachi Ltd, Res & Dev Grp, 832-2 Horiguchi, Hitachinaka, Ibaraki, Japan
[2] Hitachi Automot Syst Ltd, Elect Device Design Div, Hitachinaka, Ibaraki, Japan
[3] Kobe Univ, Dept Mech Engn, Kobe, Hyogo, Japan
关键词
wafer-level packaging; anodic bonding; accelerometer; gyroscope; pressure control; shear strength; VACUUM; GLASS; SENSORS;
D O I
10.1088/0960-1317/26/10/105007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This research demonstrates a newly developed anodic bonding-based wafer-level-packaging technique to simultaneously seal an accelerometer in the atmosphere and a gyroscope in a vacuum with a glass cap for micro-electromechanical systems sensors. It is necessary for the accelerometer, with a damping oscillator, to be sealed in the atmosphere to achieve a high-speed response. As the gyroscope can achieve high sensitivity with a large displacement at the resonant frequency without air-damping, the gyroscope must be sealed in a vacuum. The technique consists of three processing steps: the first bonding step in the atmosphere for the accelerometer, the pressure control step and the second bonding step in a vacuum for the gyroscope. The process conditions were experimentally determined to achieve higher shear strength at the interface of the packaging. The packaging performance of the accelerometer and gyroscope after wafer-level packaging was also investigated using a laser Doppler velocimeter at room temperature. The amplitude at the resonant frequency of the accelerometer was reduced by air damping, and the quality factor of the gyroscope showed a value higher than 1000. The reliability of the gyroscope was also confirmed by a thermal cyclic test and an endurance test at high humidity and high temperature.
引用
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页数:10
相关论文
共 31 条
[21]   Temperature dependent fracture toughness of glass frit bonding layers [J].
Noetzold, Kerstin ;
Dresbach, Christian ;
Graf, Jurgen ;
Boettge, Bianca .
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2010, 16 (07) :1243-1249
[22]   Sealing of adhesive bonded devices on wafer level [J].
Oberhammer, J ;
Niklaus, F ;
Stemme, G .
SENSORS AND ACTUATORS A-PHYSICAL, 2004, 110 (1-3) :407-412
[23]   Wafer level sealing characterization method using Si micro cantilevers [J].
Okada, Hironao ;
Itoh, Toshihiro ;
Suga, Tadatomo .
SENSORS AND ACTUATORS A-PHYSICAL, 2008, 147 (02) :359-364
[24]   A MODEL FOR THE SILICON-WAFER BONDING PROCESS [J].
STENGL, R ;
TAN, T ;
GOSELE, U .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :1735-1741
[25]   VACUUM WAFER LEVEL PACKAGED TWO-DIMENSIONAL OPTICAL SCANNER BY ANODIC BONDING [J].
Tachibana, H. ;
Kawano, K. ;
Ueda, H. ;
Noge, H. .
IEEE 22ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2009), 2009, :959-962
[26]   Aligned room-temperature bonding of silicon wafers in vacuum by argon beam surface activation [J].
Takagi, H ;
Maeda, R .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (02) :290-295
[27]   Wafer-level hermetic MEMS packaging by anodic bonding and its reliability issues [J].
Tanaka, Shuji .
MICROELECTRONICS RELIABILITY, 2014, 54 (05) :875-881
[28]   A Bulk-Micromachined Three-Axis Capacitive MEMS Accelerometer on a Single Die [J].
Tez, Serdar ;
Aykutlu, Ulas ;
Torunbalci, Mustafa Mert ;
Akin, Tayfun .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2015, 24 (05) :1264-1274
[29]   ADSORPTION OF MIXED GASES ON A PYREX GLASS SURFACE AT VERY LOW-PRESSURES [J].
TUZI, Y ;
KOBAYASH.M ;
ASAO, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :248-&
[30]  
Vigna B, 2009, PROC IEEE MICR ELECT, P1, DOI 10.1109/MEMSYS.2009.4805304