Kelvin probe force microscopy in the presence of intrinsic local electric fields

被引：12

作者：

Baumgart, Christine ^{[1
]}

Mueller, Anne-Dorothea ^{[2
]}

Mueller, Falk ^{[2
]}

Schmidt, Heidemarie ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Anfatec Instruments AG, D-08606 Oelsnitz, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 04期

关键词：

dopant profiling; doping; Kelvin probe force microscopy; semiconductors; SCANNING CAPACITANCE MICROSCOPY; MODULATION-DETECTION; PN JUNCTION; LABEL-FREE; RESOLUTION; AMPLITUDE; PROFILES; BIAS; TIP;

D O I：

10.1002/pssa.201026251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and doped semiconductors. The observed frequency dependence of the probed KPFM bias is strongly related to sample-specific intrinsic local electric fields. Equilibrium drift and diffusion of excess charge carriers at low operation frequencies influence the characteristics of the asymmetric electric dipole in the surface region of the investigated semiconductors during the KPFM measurement. The sample-specific KPFM background signal does not influence the frequency-dependent lateral variation of the electrical signal. The KPFM bias probed on doped semiconductor nanostructures with high or small enough operation frequencies allows for quantitative dopant profiling or investigation of diffusion processes in internal electric fields, respectively. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：777 / 789

页数：13

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