Recent Progress in 1.3-μm Uncooled InGaAlAs Directly Modulated Lasers

被引：0
作者：
Fukamachi, T. [1 ,2 ]
Adachi, K. [1 ]
Shinoda, K. [1 ]
Tsuji, S. [1 ]
Kitatani, T. [2 ]
Tanaka, S. [2 ]
Aoki, M. [2 ]
机构：
[1] Photon Elect Technol Res Assoc, Bunkyo Ku, Tokyo, Japan
[2] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent progress in developing 1.3-mu m InGaAlAs-MQW directly modulated lasers is reported. Uncooled 25-Gbps operations over a wide temperature range were demonstrated. Clear eye opening up to 100 degrees C was successfully obtained.
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页码：189 / +
页数：2
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