Macro-modeling for the compact simulation of single electron transistor using SIMPLORER

被引：6

作者：

Troudi, M. ^{[1
]}

Sghaier, Na. ^{[2
,3
]}

Boubaker, A. ^{[1
]}

Souifi, A. ^{[3
]}

Kalboussi, A. ^{[1
]}

机构：

[1] Fac Sci Monastir, Lab Microelect & Instrumentat UR 03 12 04, Monastir, Tunisia

[2] Inst Nat Ingn Nabeul, Equipe Elect UR 99 1322, Merazka 8000, Tunisia

[3] Inst Natl Sci Appl, Inst NAnotechnol Lyon INSA, F-69621 Villeurbanne, France

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 12期

关键词：

single electron transistor (SET); macro-model; SIMPLORER; quantizer; coulomb blockade;

D O I：

10.1016/j.mejo.2007.09.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present analog and digital studies of the single electron transistor (SET), in which only one electron at the time is transferred through the circuit. In the first part of this paper, we show numerical simulations of fundamental characteristics of SET using MATLAB. As a second part of this work we develop a closely example of macro-model of SET using SIMPLORER. Our idea to concept this macro-model was based on the quantification of the output signal on the island level. In order to obtain a quantified output signal on the island we have modeled a quantum dots as a quantizer bloc. This signal quantified was correlated to the energy levels. This description of a model let us to valid our conception and to value the impact of quantizer bloc on the output response of the SET. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1156 / 1160

页数：5