Variable-body-factor SOI MOSFET with ultrathin buried oxide for adaptive threshold voltage and leakage control

被引：43

作者：

Ohtou, Tetsu ^{[1
,2
]}

Saraya, Takuya ^{[1
]}

Hiramoto, Toshiro ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[2] Taiwan Mfg Co Ltd, Div Res & Dev, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 01期

关键词：

back-bias; body-bias; fully-depleted SOI; thin buried-oxide (BOX);

D O I：

10.1109/TED.2007.912612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new device concept [a variable-body-factor fully depleted silicon-on-insulator (SOI) MOSFET], where the body factor is modulated by the substrate bias. The buried oxide in the SOI substrate is extremely thin. The operation principle, simulation result, measurement data of dc characteristics, and measurement data of ring oscillators are described, and the low-power/high-speed characteristics of this new device concept is discussed. It is also shown that the device concept is applicable to multiple-gate structures such as a FinFET.

引用

页码：40 / 47

页数：8

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