Enhancement of room temperature ferromagnetism of Fe-doped ZnO epitaxial thin films with Al co-doping

被引：31

作者：

Chattopadhyay, S. ^{[1
]}

Nath, T. K. ^{[1
,2
]}

Behan, A. J. ^{[2
]}

Neal, J. R. ^{[2
]}

Score, D. ^{[2
]}

Feng, Q. ^{[2
]}

Fox, A. M. ^{[2
]}

Gehring, G. A. ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2011年 / 323卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

Dilute magnetic semiconductor; Carrier induced ferromagnetism; Defect state; Spinodal decomposition; Antiferromagnetic coupling; SPIN INJECTION; SEMICONDUCTORS;

D O I：

10.1016/j.jmmm.2010.11.090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial films of ZnO doped with magnetic ion Fe and, in some cases, with 1% Al show clear evidence of room temperature ferromagnetic ordering. The Al doped optimized samples with carrier concentration n(c)similar to 8.0 x 10(20) cm(-3) show about 3 times enhanced saturation magnetization(0.58 mu(B)/Fe2+) than the one with n(c)similar to 3.0 x 10(20) cm(-3) (0.18 mu(B)/Fe2+). A clear correlation between the magnetization per transition metal ion and the ratio of the number of carriers to the number of donors have been found as is expected for carrier-induced room temperature ferromagnetism. The transport mechanism of the electrons in all the DMS films at low temperature range has been identified with the Efros's variable range hopping due to the electron-electron Coulomb interaction. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1033 / 1039

页数：7

共 21 条

[1] Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator [J].

Behan, A. J. ;

Mokhtari, A. ;

Blythe, H. J. ;

Score, D. ;

Xu, X-H. ;

Neal, J. R. ;

Fox, A. M. ;

Gehring, G. A. .

PHYSICAL REVIEW LETTERS, 2008, 100 (04)

[2] Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu [J].

Chakraborti, D. ;

Ramachandran, S. ;

Trichy, G. ;

Narayan, J. ;

Prater, J. T. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)

[3] Temperature-dependent magnetization in diluted magnetic semiconductors [J].

Das Sarma, S ;

Hwang, EH ;

Kaminski, A .

PHYSICAL REVIEW B, 2003, 67 (15)

[4] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[5]

HAMBY DW, 2002, APPL PHYS, V93, P3214

[6] Polaron percolation in diluted magnetic semiconductors [J].

Kaminski, A ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 2002, 88 (24) :4

[7] Ferromagnetism in Fe-doped ZnO nanocrystals: Experiment and theory [J].

Karmakar, Debjani ;

Mandal, S. K. ;

Kadam, R. M. ;

Paulose, P. L. ;

Rajarajan, A. K. ;

Nath, T. K. ;

Das, A. K. ;

Dasgupta, I. ;

Das, G. P. .

PHYSICAL REVIEW B, 2007, 75 (14)

[8] Magnetic phase diagram of Pb1-x-ySnyMnxTe semimagnetic semiconductors [J].

Lazarczyk, P ;

Story, T ;

Arciszewska, M ;

Galazka, RR .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 169 (1-2) :151-158

[9] Synthesis and magnetic properties of Al doped Zn0.995Mn0.005O powers [J].

Li, Xiang ;

Yu, Zhou ;

Long, Xue ;

Lin, Pengtin ;

Cheng, Xingwang ;

Liu, Ying ;

Cao, Chuanbao ;

Zhang, Hongwei ;

Wu, Guangheng ;

Yu, Richeng .

APPLIED PHYSICS LETTERS, 2009, 94 (25)

[10] Electrical transport and ac conductivity properties of hydrogenated annealing V-doped ZnO [J].

Liu, S. H. ;

Huang, J. C. A. ;

Lin, C. R. ;

Qi, X. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)

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