Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs

被引：0

作者：

Grill, A. ^{[1
,2
]}

Rzepa, G. ^{[2
]}

Lagger, P. ^{[3
]}

Ostermaier, C. ^{[3
]}

Ceric, Hajdin ^{[1
,2
]}

Grasser, T. ^{[2
]}

机构：

[1] TU Wien, Christian Doppler Lab Reliabil Issues Microelect, Vienna, Austria

[2] TU Wien, Inst Microelect, Vienna, Austria

[3] Infineon Technol AG, Villach, Austria

来源：

2015 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge trapping in the insulating layer of gallium-nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) is a serious reliability challenge but is still poorly understood. We demonstrate here that the observed V-th drift and recovery can be understood as charge capture and emission following a non-radiative multi-phonon (NMP) mechanism into traps with widely distributed properties. Furthermore, due to the large amount of trapped charge, the feedback of that charge on the surface potential and thus on the capture and emission times has to be considered self-consistently in order to correctly explain the temporal changes in their distributions.

引用

页码：41 / 45

页数：5

共 11 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[2] Electronic surface and dielectric interface states on GaN and AlGaN [J].

Eller, Brianna S. ;

Yang, Jialing ;

Nemanich, Robert J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (05)

[3] Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps [J].

Grasser, T. ;

Wagner, P. -J. ;

Reisinger, H. ;

Aichinger, Th ;

Pobegen, G. ;

Nelhiebel, M. ;

Kaczer, B. .

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,

[4] Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities [J].

Grasser, Tibor .

MICROELECTRONICS RELIABILITY, 2012, 52 (01) :39-70

[5]

Imada T., 2010, 2010 International Power Electronics Conference (IPEC - Sapporo), P1027, DOI 10.1109/IPEC.2010.5542039

[6]

Kaminski N., 2012, 2012 7th International Conference on Integrated Power Electronics Systems, P1

[7]

Lagger P, 2014, INT RELIAB PHY SYM, DOI 10.1109/IRPS.2014.6861110

[8] Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress [J].

Lagger, P. ;

Steinschifter, P. ;

Reiner, M. ;

Stadtmueller, M. ;

Denifl, G. ;

Naumann, A. ;

Mueller, J. ;

Wilde, L. ;

Sundqvist, J. ;

Pogany, D. ;

Ostermaier, C. .

APPLIED PHYSICS LETTERS, 2014, 105 (03)

[9]

Lagger P, 2012, 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

[10] Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments [J].

Lagger, Peter ;

Reiner, Maria ;

Pogany, Dionyz ;

Ostermaier, Clemens .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (04) :1022-1030

← 1 2 →