Terahertz-Wave Generation Using Resonant-Antenna-Integrated Uni-Traveling-Carrier Photodiodes

被引：0

作者：

Ito, Hiroshi ^{[1
,2
]}

Ishibashi, Tadao ^{[3
]}

机构：

[1] Kitasato Univ, Ctr Nat Sci, Minami Ku, 1-15-1 Kitasato, Sagamihara, Kanagawa 2520373, Japan

[2] Kitasato Univ, Grad Sch Med Sci, Minami Ku, 1-15-1 Kitasato, Sagamihara, Kanagawa 2520373, Japan

[3] NTT Elect Techno Corp, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

来源：

IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS IV | 2017年 / 10209卷

基金：

日本科学技术振兴机构;

关键词：

uni-traveling-carrier photodiode; slot antenna; resonant bowtie antenna; quasi-optical module; THz wave; output power enhancement; HIGH-SPEED; PHOTODETECTORS; MILLIMETER; MODULE; GUIDE;

D O I：

10.1117/12.2262764

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Two types of resonant antennas were integrated with uni-traveling-carrier photodiodes (UTC-PDs) to increase THz-wave output powers. Slot-antenna integrated UTC-PDs exhibited two to three times larger output powers at their peak frequencies than those of a non-resonant bowtie-antenna-integrated device. Output power was enhanced at frequencies from 900 GHz to 1.6 THz for a narrow-slot UTC-PD and from 350 to 850 GHz for a wide-slot UTC-PD. The detected output power was 3.5 mu W at 1.25 THz and 28 mu W at 700 GHz for a photocurrent of 10 mA with a bias voltage of -0.4 V. A resonant bowtie-antenna, which can be designed by simple analytical calculation, was also integrated with a UTC-PD. The fabricated device exhibited about three times larger output powers at its peak frequency than those of a non-resonant bowtie-antenna-integrated device with an output-power-enhanced frequency range from 400 to 700 GHz.

引用

页数：9

共 30 条

[1] Telecommunications technology-based terahertz sources [J].

Fice, M. J. ;

Rouvalis, E. ;

Ponnampalam, L. ;

Renaud, C. C. ;

Seeds, A. J. .

ELECTRONICS LETTERS, 2010, 46 (26) :S28-S31

[2] A 120-GHz microstrip antenna monolithically integrated with a photodiode on Si [J].

Hirata, A ;

Minotani, T ;

Nagatsuma, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (3A) :1390-1394

[3] Generation of millimetre and sub-millimetre waves by photomixing in 1.55 μm wavelength photodiode [J].

Huggard, PG ;

Ellison, BN ;

Shen, P ;

Gomes, NJ ;

Davies, PA ;

Shillue, W ;

Vaccari, A ;

Payne, JM .

ELECTRONICS LETTERS, 2002, 38 (07) :327-328

[4]

Ishibashi Tadao, 2015, 2015 IEEE Photonics Conference (IPC). Proceedings, P116, DOI 10.1109/IPCon.2015.7323629

[5]

Ishibashi T., 1997, ULTR EL OPT OSA SPRI, P166

[6] Unitraveling-Carrier Photodiodes for Terahertz Applications [J].

Ishibashi, Tadao ;

Muramoto, Yoshifumi ;

Yoshimatsu, Toshihide ;

Ito, Hiroshi .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (06) :79-88

[7] InP/lnGaAs uni-travelling-carrier photodiode with 310GHz bandwidth [J].

Ito, H ;

Furuta, T ;

Kodama, S ;

Ishibashi, T .

ELECTRONICS LETTERS, 2000, 36 (21) :1809-1810

[8] Photonic generation of continuous THz wave using uni-traveling-carrier photodiode [J].

Ito, H ;

Furuta, T ;

Nakajima, F ;

Yoshino, K ;

Ishibashi, T .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2005, 23 (12) :4016-4021

[9] Enhanced-output-power broadband terahertz-wave emitter based on slot-antenna-integrated uni-travelling-carrier photodiode [J].

Ito, H. ;

Yamamoto, H. ;

Yoshimatsu, T. ;

Ishibashi, T. .

ELECTRONICS LETTERS, 2015, 51 (21) :1670-U103

[10] High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes [J].

Ito, H ;

Kodama, S ;

Muramoto, Y ;

Furuta, T ;

Nagatsuma, T ;

Ishibashi, T .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (04) :709-727

← 1 2 3 →